An Innovative Parametric Optimization using Taguchi Method for Cu(In,Ga)(S,Se)2 Thin Film Solar Cell Device Simulation
In this simulation study, Taguchi Method was used to investigate the influence of the absorber layer grading profile on the photovoltaic performance of CIGS solar cells. The work is simulation-based whereby the solar cell model was created and simulated using SCAPS-1d software. Four control factors have been chosen, such as the band gap minimum (Eg,min), the position of the band gap minimum (XEg,min), the band gap of the absorber layer towards the buffer layer (Eg,front), and the band gap of the absorber towards the back contact (Eg,rear). The aim is to find the most suitable combination of control factors that result in the most favorable outcomes for open circuit voltage (Voc), short circuit current (Jsc) and fill factor (FF) over acceptor concentration ranging from 2.0x1014 to 2.0x1016 cm-3 and donor concentration between 1.0 x1017 to 1.0x1019 cm-3. The results show that the highest power conversion efficiency was achieved using a combination of high-level Eg, min with low-level XEg, min, middle-level Eg, front and high-level Eg, rear. The simulated device demonstrated an average efficiency of 22.08% with corresponding Jsc = 43.05 mA/cm2, Voc = 0.704 V and FF = 76.37. Confirmation test on the developed model from Taguchi Method demonstrates a robust characteristics on all outcomes against the realistic carrier concentration range mentioned above.